BGS8M2是NXP公司的一款LNAs產(chǎn)品，BGS8M2是SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE，本站介紹了BGS8M2的封裝應(yīng)用圖解、特點(diǎn)和優(yōu)點(diǎn)、功能等，并給出了與BGS8M2相關(guān)的NXP元器件型號(hào)供參考。
BGS8M2 - SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE - LNAs - RF MMIC放大器與混頻器 - 恩智浦, LLC
The BGS8M2 is a Low Noise Amplifier (LNA) with bypass switch for LTE receiver applications,available in a small plastic 6-pin extremely thin leadless package. The BGS8M2 requiresone external matching inductor.
The BGS8M2 delivers system-optimized gain for both primary and diversity applicationswhere sensitivity improvement is required. The high linearity of these low noise devicesensures the required receive sensitivity independent of cellular transmit power level inFDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, theBGS8M2 can be switched off to operate in bypass mode at a 1 μA current, to lower powerconsumption.
The BGS8M2 is optimized for 1805 MHz to 2200 MHz.
- Operating frequency from 1805 MHz to 2200 MHz
- Noise figure (NF) = 0.85 dB
- Gain 14.4 dB
- High input 1 dB compression point of -3.5 dBm
- Bypass switch insertion loss of 2.2 dB
- High in band IP3i of 3.5 dBm
- Supply voltage 1.5 V to 3.1 V
- Self shielding package concept
- Integrated supply decoupling capacitor
- Optimized performance at a supply current of 5.8 mA
- Power-down mode current consumption < 1 μA
- Integrated temperature stabilized bias for easy design
- Require only one input matching inductor
- Input and output DC decoupled
- ESD protection on all pins (HBM > 2 kV)
- Integrated matching for the output
- Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch:SOT1232
- 180 GHz transit frequency - SiGe:C technology
- Moisture sensitivity level of 1
- LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules
