BGU8H1UK是NXP公司的一款LNAs產(chǎn)品，BGU8H1UK是SiGe:C Low Noise Amplifier MMIC for LTE，本站介紹了BGU8H1UK的封裝應(yīng)用圖解、特點和優(yōu)點、功能等，并給出了與BGU8H1UK相關(guān)的NXP元器件型號供參考。
BGU8H1UK - SiGe:C Low Noise Amplifier MMIC for LTE - LNAs - RF MMIC放大器與混頻器 - 恩智浦, LLC
The BGU8H1UK is a Low Noise Amplifier (LNA) for LTE receiver applications. It comes asan extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8H1UKrequires one external matching inductor.
The BGU8H1UK adapts itself to the changing environment resulting from co-habitation ofdifferent radio systems in modern cellular handsets. It has been designed for low powerconsumption and optimal performance. At low jamming power levels it delivers 16 dB gainat a noise figure of 0.9 dB. During high power levels, it temporarily increases its biascurrent to improve sensitivity.
The BGU8H1UK is optimized for 2300 MHz to 2690 MHz.
- Operating frequency from 2300 MHz to 2690 MHz
- Noise figure (NF) = 0.9 dB
- Gain = 16 dB
- High input 1 dB compression point of -5 dBm
- High in band IP3i of 3 dBm
- Supply voltage 1.5 V to 3.1 V
- Self shielding package concept
- Integrated supply decoupling capacitor
- Optimized performance at a supply current of 4.6 mA
- Power-down mode current consumption < 1 μA
- Integrated temperature stabilized bias for easy design
- Require only one input matching inductor
- Output DC decoupled
- ESD protection on all pins (HBM > 2 kV)
- Integrated matching for the output
- Extremely small Wafer Level Chip Scale Package (WLCSP) 0.65 mm x 0.44 mm x 0.2 mm;6 solder bumps; 0.22 mm bump pitch
- 180 GHz transit frequency - SiGe:C technology
- LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-endmodules
