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BLF8G20LS-140(G)V技術(shù)文檔下載：
BLF8G20LS-140(G)V產(chǎn)品應(yīng)用圖解：
BLF8G20LS-140(G)V - Power LDMOS transistor
BLF8G20LS-140(G)V是NXP公司的一款RF功率晶體管產(chǎn)品，BLF8G20LS-140(G)V是Power LDMOS transistor，本站介紹了BLF8G20LS-140(G)V的封裝應(yīng)用圖解、特點和優(yōu)點、功能等，并給出了與BLF8G20LS-140(G)V相關(guān)的NXP元器件型號供參考。
BLF8G20LS-140(G)V - Power LDMOS transistor - RF功率晶體管 - RF MMIC放大器與混頻器 - 恩智浦, LLC
產(chǎn)品描述
140 W LDMOS power transistor for base station applications at frequencies from1805 MHz to 1990 MHz.
產(chǎn)品特性和優(yōu)勢
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Decoupling leads to enable improved video bandwidth (150 MHz typical)
- Designed for broadband operation (1805 MHz to 1990 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)
產(chǎn)品應(yīng)用
- RF power amplifiers for base stations and multi carrier applications in the 1805 MHzto 1990 MHz frequency range
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