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BLM8G0710S-30PB(G)技術(shù)文檔下載：
BLM8G0710S-30PB(G)產(chǎn)品應(yīng)用圖解：
BLM8G0710S-30PB(G) - LDMOS 2-stage power MMIC
BLM8G0710S-30PB(G)是NXP公司的一款RF功率晶體管產(chǎn)品，BLM8G0710S-30PB(G)是LDMOS 2-stage power MMIC，本站介紹了BLM8G0710S-30PB(G)的封裝應(yīng)用圖解、特點(diǎn)和優(yōu)點(diǎn)、功能等，并給出了與BLM8G0710S-30PB(G)相關(guān)的NXP元器件型號(hào)供參考。
BLM8G0710S-30PB(G) - LDMOS 2-stage power MMIC - RF功率晶體管 - RF MMIC放大器與混頻器 - 恩智浦, LLC
產(chǎn)品描述
The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using NXP’s state ofthe art GEN8 LDMOS technology. This multiband device is perfectly suited as generalpurpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz.Available in gull wing or straight lead outline.
產(chǎn)品特性和優(yōu)勢(shì)
- Designed for broadband operation (frequency 700 MHz to 1000 MHz)
- High section-to-section isolation enabling multiple combinations
- Integrated temperature compensated bias
- Biasing of individual stages is externally accessible
- Integrated ESD protection
- Excellent thermal stability
- High power gain
- On-chip matching for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances(RoHS)
產(chǎn)品應(yīng)用
- RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequencyrange. Possible circuit topologies are the following:
- Dual section or single ended
- Doherty
- Quadrature combined
- Push-pull
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