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BLM8G0710S-45ABG技術文檔下載：
BLM8G0710S-45ABG產(chǎn)品應用圖解：
BLM8G0710S-45ABG - LDMOS 2-stage power MMIC
BLM8G0710S-45ABG是NXP公司的一款RF功率晶體管產(chǎn)品，BLM8G0710S-45ABG是LDMOS 2-stage power MMIC，本站介紹了BLM8G0710S-45ABG的封裝應用圖解、特點和優(yōu)點、功能等，并給出了與BLM8G0710S-45ABG相關的NXP元器件型號供參考。
BLM8G0710S-45ABG - LDMOS 2-stage power MMIC - RF功率晶體管 - RF MMIC放大器與混頻器 - 恩智浦, LLC
產(chǎn)品描述
The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using NXP’sstate of the art GEN8 LDMOS technology. This multiband device is perfectly suited assmall cell final stage in Doherty configuration, or as general purpose driver in the 700MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.
產(chǎn)品特性和優(yōu)勢
- Designed for broadband operation (frequency 700 MHz to 1000 MHz)
- High section-to-section isolation enabling multiple combinations
- High Doherty efficiency thanks to 2 : 1 asymmetry
- Integrated temperature compensated bias
- Biasing of individual stages is externally accessible
- Integrated ESD protection
- Excellent thermal stability
- High power gain
- On-chip matching for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances(RoHS)
產(chǎn)品應用
- RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency range. Possiblecircuit topologies are the following:
- Asymmetric final stage in Doherty configuration
- Asymmetric driver for high power Doherty amplifier
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