CBTV24DD12ET是NXP公司的一款存儲器數(shù)據(jù)開關(guān)產(chǎn)品，CBTV24DD12ET是12-bit bus switch/multiplexer for DDR4-DDR3-DDR2 applications，本站介紹了CBTV24DD12ET的封裝應(yīng)用圖解、特點和優(yōu)點、功能等，并給出了與CBTV24DD12ET相關(guān)的NXP元器件型號供參考。
CBTV24DD12ET - 12-bit bus switch/multiplexer for DDR4-DDR3-DDR2 applications - 存儲器數(shù)據(jù)開關(guān) - 接口與連接性 - 恩智浦, LLC
The CBTV24DD12 is designed for 1.8 V / 2.5 V / 3.3 V supply voltage operation and itsupports Pseudo Open Drain (POD), SSTL_12, SSTL_15 or SSTL_18 signaling and CMOS selectinput levels. This device is designed for operation in DDR4, DDR3 or DDR2 memory bussystems, with speeds up to 3200 MT/s.
The CBTV24DD12 has a 1:2 switch or 2:1 multiplex topology and offers a 12-bit wide bus.Each 12-bit wide A-port can be switched to one of two ports B and C, for all bitssimultaneously. Each port is non-directional due to the use of FET switches, allowing amultitude of applications requiring high-bandwidth switching or multiplexing.
The selection of the port is by a simple CMOS input (SELect). Another CMOS input (ENable) is available to allow all ports to bedisconnected. The SEL0, SEL1 and EN input signals aredesigned to operate transparently as CMOS input level signals up to 3.3 V. TheCBTV24DD12 uses NXP’s proprietary high-speed switch architecture providing highbandwidth, very little insertion loss, return loss, and very low propagation delay,allowing use in many applications requiring switching or multiplexing of high-speedsignals. It is available in a 3.0 mm × 8.0 mm TFBGA48 package with 0.65 mm ball pitch,for optimal size versus board layout density considerations. It is characterized foroperation from -10 °C to +85 °C.
Topology
- 12-bit bus width
- 1:2 switch/MUX topology
- Bidirectional operation
- Simple CMOS select pins (SEL0, SEL1)
- Simple CMOS enable pin (EN)
Performance
- 3200 MT/s throughput
- 7.4 GHz bandwidth (for both single-ended and differential signals)
- Low ON insertion loss
- Low return loss
- Low crosstalk
- High OFF isolation
- POD_12, SSTL_12, SSTL_15 or SSTL_18 signaling
- Low RON (8 ? typical)
- Low ΔRON (<1 ?)
General attributes
- 1.8 V / 2.5 V / 3.3 V supply voltage operation
- Very low supply current (600 μA typical)
- ESD robustness exceeds 2.5 kV HBM, 1 kV CDM
- Available in TFBGA48 package, 3.0 mm × 8.0 mm × 1.0 mm size, 0.65 mm pitch,Pb-free/Dark Green
- DDR4/DDR3/DDR2 memory bus systems
- NVDIMM module
- Systems requiring high-speed multiplexing
- Flash memory array subsystem
