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PBSS4032NT技術(shù)文檔下載：
PBSS4032NT產(chǎn)品應(yīng)用圖解：
PBSS4032NT - 30 V, 2.6 A NPN low VCEsat (BISS) transistor
PBSS4032NT是NXP公司的一款低壓低VCEsat (BISS)晶體管產(chǎn)品，PBSS4032NT是30 V, 2.6 A NPN low VCEsat (BISS) transistor，本站介紹了PBSS4032NT的封裝應(yīng)用圖解、特點(diǎn)和優(yōu)點(diǎn)、功能等，并給出了與PBSS4032NT相關(guān)的NXP元器件型號(hào)供參考。
PBSS4032NT - 30 V, 2.6 A NPN low VCEsat (BISS) transistor - 低壓低VCEsat (BISS)晶體管 - 低VCEsat（BISS）晶體管 - 恩智浦, LLC
產(chǎn)品描述
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PT.
產(chǎn)品特性和優(yōu)勢(shì)
- Low collector-emitter saturation voltage VCEsat
- Optimized switching time
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
產(chǎn)品應(yīng)用
- DC-to-DC conversion
- Battery-driven devices
- Power management
- Charging circuits
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